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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1027 DESCRIPTION With TO-3 package High power dissipation Low collector saturation voltage APPLICATIONS Switching regulators DC-DC convertor General purpose power amplifiers PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION Absolute maximum ratings(Ta=ae ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Fig.1 simplified outline (TO-3) and symbol HAN INC Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current SEM GE OND IC CONDITIONS TOR UC VALUE 250 80 5 6 UNIT V V V A W ae ae Open emitter Open base Open collector Collector power dissipation Junction temperature Storage temperature TC=25ae 50 150 -55~150 Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN 2SC1027 SYMBOL TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ;IB=0 80 V V(BR)CBO V(BR)EBO Collector-base breakdown voltage IC=1mA ;IE=0 IE=1mA ;IC=0 250 V Emitter-base breakdown voltage 5 V VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A 1.0 V VBEsat Base-emitter saturation voltage IC=5A; IB=0.5A 1.5 V ICBO Collector cut-off current VCB=250V; IE=0 0.1 mA IEBO Emitter cut-off current hFE DC current gain VEB=5V; IC=0 0.1 mA IC=5A ; VCE=2V HAN INC SEM GE OND IC TOR UC 10 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1027 SEM GE HAN INC OND IC TOR UC Fig.2 outline dimensions (unindicated tolerance:A 0.1mm) 3 |
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